Ka‑Band Module Development & Complex Modulation Measurement Support
Details
| Contract Title: | Ka‑Band Module Development & Complex Modulation Measurement Support |
| Published Date: | Feb 4, 2026 |
| Notice Type: | Award (ContractAwardNotice) |
| Value Banding: | High Value |
| Delivery Point: | United Kingdom |
Description:
Specialist technical input into the DSIT Semiconductor Project: Ka‑Band Module Development and Complex Modulation Measurements, contributing to the development of new measurement capability in high‑frequency RF semiconductor characterisation. The work includes: Characterisation of dielectric properties (e.g., charge mobility, permittivity) of semiconductor materials such as GaAs/GaN from 26.5-40 GHz and up to 330 GHz, including 2D wafer property mapping. Development of on‑wafer modulated‑signal ...