GaN HEMT semiconductor etching
Details
| Contract Title: | GaN HEMT semiconductor etching |
| Published Date: | Feb 20, 2026 |
| Notice Type: | Award (ContractAwardNotice) |
| Value Banding: | High Value |
| Delivery Point: | United Kingdom |
Description:
The project aims to create full microelectronics manufacturing on Gallium Nitride (GaN) integrated circuits...